Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs

Authors
Fay, P Lu, J Xu, Y Bernstein, GH Gonzalez, A Mazumder, P Chow, DH Schulman, JN
Citation
P. Fay et al., Digital integrated circuit using integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb RITDs, ELECTR LETT, 37(12), 2001, pp. 758-759
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
12
Year of publication
2001
Pages
758 - 759
Database
ISI
SICI code
0013-5194(20010607)37:12<758:DICUII>2.0.ZU;2-6
Abstract
The demonstration of the first integrated circuit using monolithically inte grated InAs/AlSb/GaSb resonant interband tunnelling diodes (RITDs) and InAl As/InGaAs/InP high electron mobility transistors (HEMTs) is reported. A D-f lipflop (D-FF) was implemented using the monostable/bistable logic element (MOBILE) circuit architecture, with a measured effective voltage gain in ex cess of 380. Power dissipation of less than 2.8 mW/gate was measured.