Scalable RF MIS varactor model

A scalable varactor model based on the equations in the BSIM3v3 model (Berk eley short-channel IGFET model) is presented to model the behaviour of a si licon-based metal-insulator-semiconductor (MIS) varactor with different dev ice geometries and bias conditions at different operation frequencies. The root mean square (RMS) errors of the s-parameters between the measured and simulated data are less than 3%. The scalable model provides satisfactory p erformance prediction for realising silicon radio frequency integrated circ uits (RFICs).