InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m

Authors
Monat, C Seassal, C Letartre, X Viktorovitch, P Regreny, P Gendry, M Rojo-Romeo, P Hollinger, G Jalaguier, E Pocas, S Aspar, B
Citation
C. Monat et al., InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m, ELECTR LETT, 37(12), 2001, pp. 764-766
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
12
Year of publication
2001
Pages
764 - 766
Database
ISI
SICI code
0013-5194(20010607)37:12<764:I2PCMO>2.0.ZU;2-W
Abstract
Room temperature pulsed laser operation of 2D photonic crystal microcavitie s around 1.55 mum is reported. Such devices are based on thin III/V heteros tructures transferred onto silicon and include an InGaAs/InP multiquantum w ell (MQW) active layer.