Characterization of polysilicon resistors in sub-0.25 mu m CMOS ULSI applications

The characteristics of polysilicon resistors in sub-0.25 mum CMOS ULSI appl ications have been studied. Based on the presented sub-0.25 mum CMOS border less contact, both n(+) and p(+) polysilicon resistors with Ti- and Co-sali cide self-aligned process are used at the ends of each resistor. A simple a nd useful model is proposed to analyze and calculate essential parameters o f polysilicon resistors including electrical delta W(DeltaW), interface res istance R-interface, and pure sheet resistance R-pure. This approach can su bstantially help engineers in designing and fabricating the precise polysil icon resistors in sub-0.25 mum CMOS technology.