The effect of remote plasma nitridation on the integrity of the ultrathin gate dielectric films in 0.13 mu m CMOS technology and beyond

The letter reports the effect of remote plasma nitridation (RPN) process on characteristics of ultrathin gate dielectric CMOSFETs with the thickness i n the range of 18 Angstrom similar to 22 Angstrom. In addition, the effect of RPN temperature on nitrogen-profile within the gate dielectric films has been investigated. Experimental results show that the thinner thickness in gate dielectric films, the more significant effect on the reducing gate cu rrent and thinning thickness of gate dielectric films by the RPN process, F urthermore, the minimum dielectric thickness to block the penetration of B and N has been estimated based on the experimental results, The minimum RPN gate dielectric thickness is about 12 Angstrom.