Double pocket architecture using indium and boron for sub-100 nm MOSFETs

A double pocket architecture for sub-100 nm MOSFET's is proposed on the bas is of indium pocket profiling at higher hose than the amorphization thresho ld. At high dose, the low-energy indium pockets realize the improvement of short channel effects and shallow extension formation of highly doped drain , maintaining the low junction leakage level. Double pocket architecture us ing indium and boron is demonstrated in a 70 nm gate length MOSFET with hig h drive currents and good control of the short channel effects.