Temperature dependency of 0.1 mu m partially depleted SOICMOSFET

This work investigates the floating body effect (FBE) on the partially depl eted SOI devices at various temperatures for high-performance 0.1 mum MOSFE T. The thermal effect on the device's characteristics was investigated with respect to the body contacted MOSFET (BC-SOI) and floating body MOSFET wit hout body contacted (FB-SOI). It is found that the threshold voltage (Vth) and the off state drain current (I-OFF) Of the BC-SOI devices are more temp erature sensitive than those of the FB-SOI devices. Far operation at higher temperatures, there is no apparent difference in driving capability betwee n the BC-SOI and FB-SOI MOSFETs.