Electrooptic effects in GaAs-AlGaAs narrow coupled quantum wells

Authors
Earnshaw, MP Allsopp, DWE
Citation
Mp. Earnshaw et Dwe. Allsopp, Electrooptic effects in GaAs-AlGaAs narrow coupled quantum wells, IEEE J Q EL, 37(7), 2001, pp. 897-904
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
37
Issue
7
Year of publication
2001
Pages
897 - 904
Database
ISI
SICI code
0018-9197(200107)37:7<897:EEIGNC>2.0.ZU;2-2
Abstract
The linear and quadratic electrooptic coefficients in narrow single and str ongly coupled GaAs-AlxGa1-xAs quantum wells have been measured, The quadrat ic electrooptic effect is enhanced over that of conventional square quantum wells for both TE and TM polarization in all the structures considered, by up to six times in the case of 2-nm-wide GaAs-Al0.2Ga0.8 As strongly coupl ed quantum wells. The origin of the enhanced quadratic electrooptic effect was found to correlate with a larger red shift in the absorption edge excit on and strong Coulombic coupling of the bound exciton states with the quasi -continua.