Tunneling-injection quantum-dot laser: Ultrahigh temperature stability

We propose a genuinely temperature-insensitive quantum dot (QD) laser. Our approach is based on direct injection of carriers into the QDs, resulting i n a strong depletion of minority carriers in the regions outside the QDs, R ecombination in these regions, which is the dominant source of the temperat ure dependence, is thereby suppressed, raising the characteristic temperatu re T-0 above 1500 K, Still further enhancement of T-0 results from the reso nant nature of tunneling injection, which reduces the inhomogeneous line br oadening by selectively cutting off the nonlasing QDs.