Simple frequency-domain analysis of MOSFET - Including nonquasi-static effect

Authors
Lee, KI Kim, J Park, YJ Min, HS
Citation
Ki. Lee et al., Simple frequency-domain analysis of MOSFET - Including nonquasi-static effect, IEEE COMP A, 20(7), 2001, pp. 867-876
Citations number
17
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
ISSN journal
02780070 → ACNP
Volume
20
Issue
7
Year of publication
2001
Pages
867 - 876
Database
ISI
SICI code
0278-0070(200107)20:7<867:SFAOM->2.0.ZU;2-K
Abstract
We propose a harmonic balance technique for the frequency-domain analysis o f the metal-oxide-semiconductor field-effect transistor (MOSFET) operation. The MOSFET model in our approach is based on the charge-sheet and the nonq uasi-static MOSFET models in the channel region with a harmonic balance tec hnique applied to the channel charges. It is shown that the proposed method renders a computationally efficient tool to analyze the harmonic distortio n occurrence in the MOSFET device due to the nonlinear response of the chan nel charges.