Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes

In this paper, the performance of P-on-n double-layer hetrojunction (DLHJ) HgCdTe photodiodes at temperature 77 K is analyzed theoretically, Calculati on has been performed for the backside-illuminated configuration. The effec t of photodiode base layer geometry on quantum efficiency and R-0 A product is analyzed. Also, the effect of lateral collection of diffusion current a nd photocurrent on photodiode parameters has been shown. Moreover the depen dence of the p-n junction position within heterostructure on the band-gap e nergy profiles and photodiode performance is presented. Finally, the influe nce of the composition gradient and p-side doping concentration on photodio de parameters is described briefly.