An analytic three-terminal band-to-band tunneling model on GIDL in MOSFET

An analytic three-terminal band-to-band tunneling current model for the gat e-induced drain leakage current (GIDL) in an n-MOSFET is developed. This mo del considers impurity doping concentration, vertical field, lateral field, and so-induced electron momentum enhancement, as well as the surface elect rostatic potential in the gate-to-drain overlapped region. Based on a const ant surface-potential approximation, a closed-form equation has been obtain ed instead of the complex integral-form in previous works. The results from this new model show good agreement with the measurement data over a wide r ange of gate and drain biases and device channel lengths. This work is usef ul for GIDL analysis in transistor design as well as in circuit simulation.