Thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors

Authors
Reid, AR Kleckner, TC Jackson, MK Marchesan, D Kovacic, SJ Long, JR
Citation
Ar. Reid et al., Thermal resistance in trench-isolated Si/SiGe heterojunction bipolar transistors, IEEE DEVICE, 48(7), 2001, pp. 1477-1479
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
7
Year of publication
2001
Pages
1477 - 1479
Database
ISI
SICI code
0018-9383(200107)48:7<1477:TRITSH>2.0.ZU;2-W
Abstract
We present a study of thermal resistance in trench-isolated Si/SiGe heteroj unction bipolar transistors (HBTs), using a technique based on isothermal c ollector current measurement. Measured thermal resistance is in good agreem ent with a realistic three-dimensional (3-D) numerical model; emitter metal lization, shallow trenches, and heat flow through the deep trench walls are all shown to have a significant effect on the thermal resistance.