Investigation of submicron linewidth direct deposition for high-density ICchip modification by focused ion beam

Submicron linewidth direct deposition is a challenge for focused ion beam t echnology. A high-resolution image is the first necessary condition in orde r to obtain such a fine deposited line. Besides this, dwell time, X and Y p ixel space, beam current, residual gas pressure, and work chamber vacuum ar e also important parameters for the deposition process. The quality of the deposited line depends on reasonable selection and optimisation of these pa rameters. Based on influence factor analysis, suitable parameters are arriv ed at for submicron linewidth deposition. The procedure was tested by its a pplication of high-density IC chip modification.