Yq. Fu et al., Investigation of submicron linewidth direct deposition for high-density ICchip modification by focused ion beam, INT J ADV M, 17(11), 2001, pp. 835-839
Citations number
1
Categorie Soggetti
Engineering Management /General
Journal title
INTERNATIONAL JOURNAL OF ADVANCED MANUFACTURING TECHNOLOGY
Submicron linewidth direct deposition is a challenge for focused ion beam t
echnology. A high-resolution image is the first necessary condition in orde
r to obtain such a fine deposited line. Besides this, dwell time, X and Y p
ixel space, beam current, residual gas pressure, and work chamber vacuum ar
e also important parameters for the deposition process. The quality of the
deposited line depends on reasonable selection and optimisation of these pa
rameters. Based on influence factor analysis, suitable parameters are arriv
ed at for submicron linewidth deposition. The procedure was tested by its a
pplication of high-density IC chip modification.