Performance of 30 nm gate length InAlAs-InGaAs MODFETs: Comparison of conventional and asymmetric coupled-well transport channel configurations

This paper presents simulation results highlighting the effect of variation s in the transverse potential profile of the transport channel, on the elec trical characteristics of Modulation Doped Field-Effect Transistors (MODFET s). In particular, the I-V and f(T)-V-g characteristics of 30 nm gate lengt h InAlAs-InGaAs MODFETs, having conventional quantum well channels, are in good agreement with our simulations. The simulation further predicts improv ement in performance when asymmetric coupled quantum wells are used as the electron transport channels. Energy bands, 2-D electron distributions, and various I-V characteristics are compared for conventional quantum well and asymmetric coupled quantum well channels. Both quantum well and quantum wir e configurations are enhanced by the incorporation of asymmetric coupled qu antum well channel.