Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice

We investigated properties of intraband absorption in In-x Ga1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calcu lated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly aff ected by the vertical coupling between quantum dots, which can be used to m odify transition wavelength by adjusting the space layer thickness. Intraba nd transition is really sensitive to normal incidence and the absorption pe ak intensity is dependent on the polarization. A satisfying agreement is fo und between theoretical and experimental values. This result opens up prosp ects for the fabrication of QDs infrared detectors, which work at atmospher ic windows.