ALL-ACTIVE MONOLITHIC INP-BASED HBT VCO WITH TUNABLE HEMT INDUCTOR

Citation
Kw. Kobayashi et al., ALL-ACTIVE MONOLITHIC INP-BASED HBT VCO WITH TUNABLE HEMT INDUCTOR, Electronics Letters, 33(16), 1997, pp. 1379-1380
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
33
Issue
16
Year of publication
1997
Pages
1379 - 1380
Database
ISI
SICI code
0013-5194(1997)33:16<1379:AMIHVW>2.0.ZU;2-G
Abstract
A novel HEMT-HBT VCO is presented; it is the first all-active analogue VCO demonstrated using InP HEMT-HBT integrated MMIC technology. The M MIC monolithically integrates an InP common-collector HBT oscillator w ith a tunable InP HEMT active inductor using selective MBE. The novel HEMT-HBT VCO can provide performance advantages over analogue VCOs suc h as the multi-vibrator, and has direct implications for high speed cl ock recovery circuits needed in InP based optoelectronic IC applicatio ns.