SINGLE-ANGLED-FACET LASER-DIODE FOR WIDELY TUNABLE EXTERNAL-CAVITY SEMICONDUCTOR-LASERS WITH HIGH SPECTRAL PURITY

Authors
HEIM PJS FAN ZF CHO SH NAM K DAGENAIS M JOHNSON FG LEAVITT R
Citation
Pjs. Heim et al., SINGLE-ANGLED-FACET LASER-DIODE FOR WIDELY TUNABLE EXTERNAL-CAVITY SEMICONDUCTOR-LASERS WITH HIGH SPECTRAL PURITY, Electronics Letters, 33(16), 1997, pp. 1387-1389
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
33
Issue
16
Year of publication
1997
Pages
1387 - 1389
Database
ISI
SICI code
0013-5194(1997)33:16<1387:SLFWTE>2.0.ZU;2-E
Abstract
External cavity semiconductor lasers are demonstrated using a single-a ngled-facet semiconductor laser diode that does not require anti-refle ction coating. A wide tuning bandwidth (7%, lambda = 980nm), large sid e-mode suppression ratio (50dB, lambda = 1590nm), narrow linewidth (50 rHz), and high output power (13.5mW) are achieved with conventional ex ternal cavity configurations.