MEASUREMENT OF OXIDE FILM GROWTH ON MG AND AL SURFACES OVER EXTENDED PERIODS USING XPS

Citation
C. Chen et al., MEASUREMENT OF OXIDE FILM GROWTH ON MG AND AL SURFACES OVER EXTENDED PERIODS USING XPS, Surface science, 382(1-3), 1997, pp. 652-657
Citations number
20
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
382
Issue
1-3
Year of publication
1997
Pages
652 - 657
Database
ISI
SICI code
0039-6028(1997)382:1-3<652:MOOFGO>2.0.ZU;2-0
Abstract
X-ray photoelectron spectroscopy (XPS) has been used to follow oxide f ilm growth on pure magnesium and pure aluminum surfaces across 12 orde rs of magnitude exposure to water vapour and humid air. Both Mg and Al exhibited logarithmic-type oxide growth kinetics. Oxide film growth w as observed to continue well into the ambient exposure range, suggesti ng the possibility For modifying the oxide film chemistry while still under atmospheric conditions. The chemistry of the films was monitored as a function of exposure by examining the changes in the core-level O Is spectra and the associated oxidised metal/oxygen stoichiometry. I t was observed that both MS and Al surfaces initially formed partially hydrated oxide surfaces which became progressively more hydrated at l onger exposures. (C) 1997 Elsevier Science B.V.