In-situ scanning tunneling microscopy (STM) observations on the electr
odeposition of nickel on Cu(100) are presented. At overpotentials of e
ta = 30 to 100 mV formation of a disordered adlayer of a precursor spe
cies is observed. Deposition of pseudomorphic Ni monolayer islands com
mences at eta = (145 +/- 5)mV at Cu step edges and in the center of at
omically smooth Cu terraces. At overpotentials in the range 145 mV to
180 mV Ni is deposited in a rather rough multilayer growth process, wi
th nucleation of second layer islands starting at total coverages as l
ow as 0.1 ML. (C) 1997 Elsevier Science B.V.