Measurement of temperature gradient in Czochralski silicon crystal growth

The temperature gradient in Czochralski (CZ) silicon crystal growth has bee n measured using a thermocouple of differential type. A temperature differe nce between two spatial points with a certain distance (5 mm) could be obta ined simultaneously using only one set of thermocouples of the differential type. Silicon crystals of 70 mm diameter were grown with different growth rates, and temperature gradients near the growth interface were measured du ring the crystal growth. It is found that the temperature gradient in the C Z silicon crystal growth increases with increasing growth rate. A balance e quation of heat transportation near the growth interface has been applied t o examine the present experimental results, and it is satisfied very well. (C) 2001 Elsevier Science B.V. All rights reserved.