Development of crystal supporting system for diameter of 400 mm silicon crystal growth

The purpose of this project is the development of a crystal supporting syst em (CSS) for silicon crystals with large diameters of 400 mm. Amongst the m any technical problems the one that the Super Silicon Crystal Research Inst itute Corp. (SSi) has directed its energies is to support a weight in exces s of the ability of the Dash neck to support this weight. After considering various solutions, we developed a CSS that mechanically supports the silic on subsidiary cone formed between the Dash neck and crystal shoulder. Using this method, an approximately 400 kg ingot was successfully grown from 500 kg of molten silicon in a 36-in. quartz crucible. We confirmed that the CS S mechanism worked correctly through the entire crystal growth process. Thi s paper presents some of the anticipated problems in the mechanical support ing method and the corresponding solutions. Finally, results from real crys tal growth to test and verify machine operation are reported. (C) 2001 Else vier Science B.V. All rights reserved.