ZnSe thick layer growth was investigated by two methods: (1) the yo-yo solu
te feeding method in which ZnSe solute is transported by the difference in
density between the solute and ZnCl2 solvent, and (2) repetition growth by
alternate supply of saturated solution in a tipping furnace. The temperatur
e modulation range is typically between 700 degreesC and 600 degreesC. In t
he yo-yo process, downward transport of ZnSe was clearly enhanced, and the
grown layer on the lower substrate was thicker than that on the upper subst
rate by three times. In the repetition growth with very slow cooling rate o
f 0.2 degreesC/min, 250 mum thickness was achieved after five repetitions.
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