ZnSe growth from zinc chloride solvent by successive liquid phase epitaxy

Citation
A. Tanaka et T. Sukegawa, ZnSe growth from zinc chloride solvent by successive liquid phase epitaxy, J CRYST GR, 229(1), 2001, pp. 87-91
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
229
Issue
1
Year of publication
2001
Pages
87 - 91
Database
ISI
SICI code
0022-0248(200107)229:1<87:ZGFZCS>2.0.ZU;2-7
Abstract
ZnSe thick layer growth was investigated by two methods: (1) the yo-yo solu te feeding method in which ZnSe solute is transported by the difference in density between the solute and ZnCl2 solvent, and (2) repetition growth by alternate supply of saturated solution in a tipping furnace. The temperatur e modulation range is typically between 700 degreesC and 600 degreesC. In t he yo-yo process, downward transport of ZnSe was clearly enhanced, and the grown layer on the lower substrate was thicker than that on the upper subst rate by three times. In the repetition growth with very slow cooling rate o f 0.2 degreesC/min, 250 mum thickness was achieved after five repetitions. (C) 2001 Elsevier Science B.V. All rights reserved.