Variation of electrical properties on growth sectors of ZnO single crystals

Citation
N. Sakagami et al., Variation of electrical properties on growth sectors of ZnO single crystals, J CRYST GR, 229(1), 2001, pp. 98-103
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
229
Issue
1
Year of publication
2001
Pages
98 - 103
Database
ISI
SICI code
0022-0248(200107)229:1<98:VOEPOG>2.0.ZU;2-1
Abstract
We have grown almost dislocation-free ZnO crystals by the hydrothermal meth od. The variation of electrical properties on growth sectors of these cryst als was studied by means of I-V and 1/C-2-V measurement. Gold contacts were made at the polar faces on each growth sector. In the (0 0 0 (1) over bar) faces [O surface] of all the sectors, clear rectifying action was observed . In the (0 0 0 1) faces [Zn surface] of all sectors, weak rectifying actio n or nearly ohmic characteristics were observed. These results indicate tha t the O surfaces tend to induce intrinsic defects like O vacancies and the rectifying characteristics become strong, while Zn surfaces tend to form a metallic face so that the Au contacts become ohmic. The variation of I-V an d 1/C-2-V characteristics on the growth sectors showed that the contacts of m growth sector have better characteristics than those of other sectors. ( C) 2001 Elsevier Science B.V. All rights reserved.