Mechanism of a-c oriented crystal growth of YBCO thin films by ion beam sputtering

Authors
Endo, T Itoh, KI Hashizume, A Kohmoto, H Takahashi, E Morimoto, D Srinivasu, VV Masui, T Niwano, K Nakanishi, H
Citation
T. Endo et al., Mechanism of a-c oriented crystal growth of YBCO thin films by ion beam sputtering, J CRYST GR, 229(1), 2001, pp. 321-324
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
229
Issue
1
Year of publication
2001
Pages
321 - 324
Database
ISI
SICI code
0022-0248(200107)229:1<321:MOAOCG>2.0.ZU;2-6
Abstract
In order to verify the critical factor of surface migration on a-c orientat ions of YBCO thin film growth, the surface roughness of MgO substrates was controlled by plasma cleaning. Then the films were deposited on these subst rates at 600 degreesC by ion beam sputtering. The a-phase ratio increases w ith increasing surface roughness. This strongly supports the surface migrat ion mechanism because the migration is retarded by surface barriers, and th en the a-phase growth is enhanced. (C) 2001 Elsevier Science B.V. All right s reserved.