Epitaxial growth of MnSi1.7 layers in the presence of an Sb flux

Semiconducting MnSi1.7, layers were grown on Si(1 1 1) substrates by reacti ve deposition epitaxy in the presence of an Sb flux. The defect microstruct ure and epitaxial relationship of the layers were examined by X-ray diffrac tion and transmission electron microscopy. It was found that epitaxial MnSi 1.7 layers with continuous and relatively smooth interfaces could be grown. The predominant epitaxial relationship adopts the (3 3 2), [(1) over bar 1 0]MnSi(1.7subcell)parallel to (1 1 1), [(1) over bar 1 0]Si using MnSi1.7 subcell notation, even though various growth variants still remain in the l ayer. The secondary ion mass spectroscopy profile reveals Sb segregation at the interface between the silicide and Si substrate. (C) 2001 Elsevier Sci ence B.V. All rights reserved.