Lattice Monte Carlo simulation with a renormalized potential in Si

Citation
R. Sahara et al., Lattice Monte Carlo simulation with a renormalized potential in Si, J CRYST GR, 229(1), 2001, pp. 610-614
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
229
Issue
1
Year of publication
2001
Pages
610 - 614
Database
ISI
SICI code
0022-0248(200107)229:1<610:LMCSWA>2.0.ZU;2-Z
Abstract
Monte Carlo (MC) simulation is carried out to study solidification of Si by a BCC lattice-gas model. To describe actual Si phases as quantitatively as possible, the Tersoff Si potential is mapped onto the BCC model by using t he potential renormalization technique proposed by one of us. Using the ren ormalized potential, thermal properties are obtained for four plausible Si structures. The solidification process is studied by MC simulation. It is s hown that calculation of the thermal properties of Si is greatly improved b y using the lattice model with a renormalized potential. (C) 2001 Elsevier Science B.V. All rights reserved.