Si nanowires and some amorphous SiOx (1 <x less than or equal to2) nanowire
s have been fabricated at ambient pressure by using SiCl4 as Si source and
Al2O3 as substrate. The smallest diameter of the Si nanowires is about 10 n
m, which therefore makes them the thinnest Si nanowires fabricated by using
SiCl4 as Si source. Most of the crystalline Si nanowires are single crysta
ls with an amorphous layer. The axes of the Si nanowires are parallel to or
perpendicular to one of the (1 1 1) crystal planes. The parameters affecti
ng the sizes of the Si nanowires are analyzed. (C) 2001 Elsevier Science B.
V. All rights reserved.