Synthesis of thin Si whiskers (nanowires) using SiCl4

Citation
Yj. Zhang et al., Synthesis of thin Si whiskers (nanowires) using SiCl4, J CRYST GR, 226(2-3), 2001, pp. 185-191
Citations number
23
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
226
Issue
2-3
Year of publication
2001
Pages
185 - 191
Database
ISI
SICI code
0022-0248(200106)226:2-3<185:SOTSW(>2.0.ZU;2-K
Abstract
Si nanowires and some amorphous SiOx (1 <x less than or equal to2) nanowire s have been fabricated at ambient pressure by using SiCl4 as Si source and Al2O3 as substrate. The smallest diameter of the Si nanowires is about 10 n m, which therefore makes them the thinnest Si nanowires fabricated by using SiCl4 as Si source. Most of the crystalline Si nanowires are single crysta ls with an amorphous layer. The axes of the Si nanowires are parallel to or perpendicular to one of the (1 1 1) crystal planes. The parameters affecti ng the sizes of the Si nanowires are analyzed. (C) 2001 Elsevier Science B. V. All rights reserved.