Growth and characterization of SrMoO3 thin films

Citation
Hh. Wang et al., Growth and characterization of SrMoO3 thin films, J CRYST GR, 226(2-3), 2001, pp. 261-266
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
226
Issue
2-3
Year of publication
2001
Pages
261 - 266
Database
ISI
SICI code
0022-0248(200106)226:2-3<261:GACOST>2.0.ZU;2-Q
Abstract
Highly conductive SrMoO3 thin films with good crystallinity and smooth surf ace were grown on SrTiO3 (0 0 1) substrates by pulsed laser deposition. The effects of substrate temperature and oxygen pressure on the structure, sur face morphology, and electrical properties were studied. In the range of su bstrate temperatures from 560 degreesC to 640 degreesC and oxygen pressure from 10 (-3) to 10 (-4) Pa studied in our experiments, high-quality SrMoO3 thin films were produced. Beyond the top temperature or oxygen pressure lim it, SrMoO4 appears as an impurity phase. High-resolution transmission elect ron microscopy (HRTEM) study shows that the SrMoO3 film has high-quality cr ystallinity and an epitaxial nature. The root-mean-square surface roughness of the film deposited at 2.5 x 10 (-4) Pa is 3.9 Angstrom. The films exhib it metallic conduction, which results from the delocalized electrons from M o. X-ray photoelectron spectroscopy (XPS) measurements characterized its co re level spectra and the valence band. (C) 2001 Elsevier Science B.V. All r ights reserved.