Characterization of thallium bromide crystals for radiation detector applications

Citation
K. Hitomi et al., Characterization of thallium bromide crystals for radiation detector applications, J CRYST GR, 225(2-4), 2001, pp. 129-133
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
225
Issue
2-4
Year of publication
2001
Pages
129 - 133
Database
ISI
SICI code
0022-0248(200105)225:2-4<129:COTBCF>2.0.ZU;2-0
Abstract
In this study, thallium bromide (TIBr) crystals have been investigated for radiation detector applications. Thallium bromide crystals have been grown by the traveling molten zone method using materials purified by the convent ional zone refining method. The grown crystals have been characterized in t erms of their structural properties, stoichiometry and surface properties. Charge transport properties of the grown crystals have also been evaluated by estimating the carrier mobilities and lifetimes of electrons and holes. Room temperature radiation detectors have been fabricated from the grown cr ystals by depositing gold electrodes on the surfaces that had been treated by mechanical polishing and chemical etching. An energy resolution of 37.2 keV full-width at half-maximum (5.6%) has been recorded fur 662 keV gamma - rays with a TIBr detector at room temperature. (C) 2001 Elsevier Science B. V. All rights reserved.