Preparation of (001)-oriented PZT thin films on silicon wafers using pulsed laser deposition

Completely (0 0 1)-oriented Pb(Zr0.52Ti0.48)O-3 (PZT) thin films deposited on (1 0 0)-silicon wafers with SrTiO3 (STO)/MgO as a buffer layer system an d YBCO as a electrode, were prepared by using KrF excimer pulsed-laser depo sition. The epitaxial relationships, i.e. PZT(0 0 1)parallel to YBCO(0 0 1) parallel to SrTiO3(1 0 0)parallel to MgO(1 0 0)parallel to Si(1 0 0) and PZ T(1 1 0) parallel to YBCO(1 1 0)parallel to SrTiO3(0 1 1)parallel to MgO(0 0 1)were detected using X-ray theta -2 theta scans and pole figures or phi -scans. Grain size and surface morphologies of the as-prepared films were e xamined using atomic force microscopy and scanning electron microscopy. (C) 2001 Published by Elsevier Science B.V.