Surface engineering along the close-packed direction of SrTiO3

Citation
Td. Doan et al., Surface engineering along the close-packed direction of SrTiO3, J CRYST GR, 225(2-4), 2001, pp. 178-182
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
225
Issue
2-4
Year of publication
2001
Pages
178 - 182
Database
ISI
SICI code
0022-0248(200105)225:2-4<178:SEATCD>2.0.ZU;2-8
Abstract
We have investigated the effects of wet etching with a 3:1 mixture of HCl:H NO3 and of annealing at 850 degreesC on the surface morphology of [1 1 1]-o riented SrTiO3 single crystals. Atomic force microscopy is used to demonstr ate that the surface morphology is a strong function of both etching and an nealing time. All surfaces have step heights equal to integral or half-inte gral multiples of the (1 1 1) interplanar spacing. However, step bunching, non-regular step heights, granularity, inhomogeneous surface morphology, an d etch pits are observed on many surfaces. A combination of etching and ann ealing leads to surfaces that are free of these irregularities and are char acterized by well-developed step-terrace structures: the terraces are appro ximate to 600 Angstrom wide, the step heights are either 1.2 Angstrom or 2. 3 Angstrom, which are a half or a whole (1 1 1) interplanar distance, respe ctively, and the step edges are parallel to a single <1 1 0 > -type directi on. The existence of these two step heights implies that the surfaces are t erminated by both SrO3 and Ti planes. (C) 2001 Elsevier Science B.V. All ri ghts reserved.