In recent years LiGaO2 has been gaining attention as a substrate material f
or the growth of GaN. Since film deposition is generally carried out at hig
h temperatures the behavior of the substrate at processing temperatures sho
uld be known. The lattice constants of polycrystalline LiGaO2 were measured
from room temperature to 1423 K and the linear thermal expansion coefficie
nts in the temperature range between 293 and 1423k were determined to be al
pha (a) = 10.1 +/- 0.2 x 10(-6) K-1, alpha (b) = 21.1 +/- 0.3 x 10(-6) K-1,
and alpha (c) = 13.6 +/- 0.2 x 10(-6) K-1. High temperature X-ray powder d
iffraction data show that at above 1173 K the Ga rich phases, LiGa5O8 and G
a2O3, start to form indicating volatilization of the Li from the structure.
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