Dependence of temperature gradient on growth rate in CZ silicon

The dependence of temperature gradient in CZ-SI crystal on the growth rate is examined by analyzing the experimental result where growth rate alone wa s varied without changing any other conditions. Unreported data are reprodu ced using the heat balance equation at the interface. It is shown that the temperature gradient increases linearly with the growth rate. The mechanism is discussed in terms of the heat flow and the interface shape. (C) 2001 P ublished by Elsevier Science B.V.