Improved phosphorus injection synthesis for bulk InP

Citation
Wm. Higgins et al., Improved phosphorus injection synthesis for bulk InP, J CRYST GR, 225(2-4), 2001, pp. 225-230
Citations number
8
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
225
Issue
2-4
Year of publication
2001
Pages
225 - 230
Database
ISI
SICI code
0022-0248(200105)225:2-4<225:IPISFB>2.0.ZU;2-0
Abstract
High purity, stoichiometric InP is being produced in crucible-shaped, 3-kg charges by the phosphorus injection method in a high-pressure magnetic liqu id encapsulated Czochralski (MLEC) crystal growth system. Dedicated heaters in the phosphorus injector assembly are used to heat and controllably inje ct the phosphorus vapor into the liquid encapsulated indium melt. Glow disc harge mass spectroscopy and van der Pauw measurements of the polycrystallin e charges and the Czochralski wafers confirmed the low background levels of impurities. (C) 2001 Elsevier Science B.V. All rights reserved.