Hydrogen neutralization effect in bulk n-type LEC InP materials

FTIR spectroscopy measurements indicate a presence of high concentration hy drogen existing in the liquid encapsulated Czochralski grown undoped InP wa fers. These undoped InP can be annealed to be semi-insulating (SI) reproduc ibly. Hydrogen can facilitate the formation of anti-site defects in InP and can also induce electrically-active hydrogen related defects. The annealed behavior of InP is proved possible to be originated from the neutralizatio n effect of hydrogen that is supplied by the dissociation of hydrogen compl exes in the process of annealing. The process of hydrogen passivation of do nors is discussed. Besides neutralizing impurities and defects in InP, hydr ogen induces new hydrogen related defects in the band gap, and can also act ivate the formation of complexes involving p(In), so it plays an important role in the charge compensation process in SI InP obtained by high temperat ure annealing. (C) 2001 Elsevier Science B.V. All rights reserved.