Preparation conditions of chromium doped ZnSe and their infrared luminescence properties

We report the investigation by photoluminescence lifetime measurements of t he near-IR emissions from a series of chromium-doped ZnSe samples, correlat ed to their preparation conditions. The samples were polycrystalline or sin gle crystals prepared by post growth diffusion doping or single crystals do ped during growth by the physical vapor transport method. Room temperature lifetime values between 6 and 8 mus were measured for samples with Cr2+ con centrations from low 10(17) to high 10(18)cm(-3) range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission o f close to 100% at room temperature. A strong decrease in the room temperat ure lifetime was found for chromium concentrations higher than 10(19) cm(-3 ). (C) 2001 Elsevier Science B.V. Ah rights reserved.