Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth

Citation
Mv. Bogdanov et al., Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth, J CRYST GR, 225(2-4), 2001, pp. 307-311
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
225
Issue
2-4
Year of publication
2001
Pages
307 - 311
Database
ISI
SICI code
0022-0248(200105)225:2-4<307:VRAANT>2.0.ZU;2-L
Abstract
We propose a new approach to optimization of SiC bulk crystal growth based on modeling. The idea is to employ a special software tool "virtual reactor " (VR) operated by the user of the code as an actual crystal growth system. The software tool includes the models necessary to simulate global heat tr ansfer in the whole growth system and inside the crucible including radiati ve transport through the semi-transparent SiC crystal. It is known that acc urate material properties are crucial for thermal modeling of SIC growth. A database with material properties of SIC crystal and powder, graphites and insulation is included into the VR-software. an advanced model of species transport during sublimation growth of SiC crystals is developed. The model includes convective and diffusive species transport, surface kinetics base d on the Hertz-Knudsen equations and chemical models for all solid surfaces (SiC crystal, SiC source, graphite wall). A model to predict type of paras itic deposit and the corresponding deposition rate is combined with the mas s transport model available in the VR-software. In this paper, we show the results of simulation of a large-size SIC bulk crystal growth using the VR- software tool with the focus on poly-SiC deposit formation on the graphite crucible lid around the crystal. (C) 2001 Elsevier Science B.V. All rights reserved.