We propose a new approach to optimization of SiC bulk crystal growth based
on modeling. The idea is to employ a special software tool "virtual reactor
" (VR) operated by the user of the code as an actual crystal growth system.
The software tool includes the models necessary to simulate global heat tr
ansfer in the whole growth system and inside the crucible including radiati
ve transport through the semi-transparent SiC crystal. It is known that acc
urate material properties are crucial for thermal modeling of SIC growth. A
database with material properties of SIC crystal and powder, graphites and
insulation is included into the VR-software. an advanced model of species
transport during sublimation growth of SiC crystals is developed. The model
includes convective and diffusive species transport, surface kinetics base
d on the Hertz-Knudsen equations and chemical models for all solid surfaces
(SiC crystal, SiC source, graphite wall). A model to predict type of paras
itic deposit and the corresponding deposition rate is combined with the mas
s transport model available in the VR-software. In this paper, we show the
results of simulation of a large-size SIC bulk crystal growth using the VR-
software tool with the focus on poly-SiC deposit formation on the graphite
crucible lid around the crystal. (C) 2001 Elsevier Science B.V. All rights
reserved.