The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition

The growth conditions for GaInAsSb and AlGaAsSb using metal-organic chemica l vapor deposition in an high speed rotating disk reactor are described. Tr imethylindium, triethylgallium, arsine, and trimethylantimony were used as precursors for the growth of GaInAsSb. Triethylgallium, ethyldimethylamine alane, triethylantimony, and arsine were the precursors used for the growth of AlGaAsSb. These materials were doped both n- and p-type using a mixture of diethyltellurium and diethylzinc as sources. An optimum growth temperat ure of 520 degreesC was determined for the growth of GaInAsSb. Growth at th is temperature yielded a root-mean-square (rms) surface roughness of 0.142 nm. AlGaAsSb could be grown over the range of 500-600 degreesC with somewha t rougher surfaces (rms > 0.7 nm). The photoluminescence was found to corre late with surface roughness, increasing with smoother surfaces. AlCaAsSb me sa isolated diodes were prepared and characterized. These diodes showed goo d current-voltage characteristics with breakdown voltages greater than -6V. (C) 2001 Elsevier Science B.V. All rights reserved.