Enabling terabit systems through MOVPE

Low pressure metal-organic vapor phase epitaxy (MOVPE) is the dominant tech nology for the fabrication of transmitters and detectors for the fiber opti c communication industry. These high bandwidth devices typically utilize he terostructure designs incorporating strained multiple quantum well active r egions. The epitaxial growth of such structures incorporates a complicated sequence of growth and regrowth steps over planar and non-planar surfaces. Abrupt interfaces, precise thickness and composition control, and uniformit y are essential for high yield, high throughput manufacturing. More: advanc ed devices integrate modulator or waveguide structures monolithically on th e transmitter chip through extensive bandgap engineering. This can be accom plished by taking advantage of localized growth modifications occurring dur ing selective area growth (SAG). Furthermore, advances in the purity levels of both the metal-organic and gas sources have enabled MOVPE grown materia ls to meet the low doping and high mobility levels required fur detector st ructures. MOVPE offers a robust, high throughput, and flexible platform to meet the ever increasing demands for optoelectronic component manufacturing . (C) 2001 Elsevier Science B.V. All rights reserved.