Defect segregation in CdGeAs2

Citation
Pg. Schunemann et al., Defect segregation in CdGeAs2, J CRYST GR, 225(2-4), 2001, pp. 440-444
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
225
Issue
2-4
Year of publication
2001
Pages
440 - 444
Database
ISI
SICI code
0022-0248(200105)225:2-4<440:DSIC>2.0.ZU;2-F
Abstract
Increased axial temperature gradients and growth rates have resulted in seg regation of unwanted absorbing defects to the edges of CdGeAs2 single cryst als produced by the horizontal gradient freeze technique. Long-wavelength i nfrared imaging of polished boules revealed a "clear" central core with abs orption losses 76 times lower than in the darker edge regions. This pronoun ced segregation is attributed to the preferred incorporation of native defe cts at facets that form near the side walls of the horizontal boat. EPR, GD MS, and Hall effect analysis were used to characterize the nature of these defects. (C) 2001 Elsevier Science B.V. All rights reserved.