Gravity-related transport process in off-axis sputtering deposition

Citation
S. Zhu et al., Gravity-related transport process in off-axis sputtering deposition, J CRYST GR, 225(2-4), 2001, pp. 522-527
Citations number
13
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
225
Issue
2-4
Year of publication
2001
Pages
522 - 527
Database
ISI
SICI code
0022-0248(200105)225:2-4<522:GTPIOS>2.0.ZU;2-R
Abstract
In the reactive off-axis sputtering deposition of ZnO films, three transpor t regimes from a ballistic motion to a diffusive drift of the ejected speci es were observed when the growth pressures were varied from 5 to 150 mTorr, The distribution of the film thickness at different substrate locations wa s measured, When the substrate surface was parallel to the gravity vector, a film thickness variation along the direction of gravity was detected in t he region of diffusive transport deposition. This phenomenon depends strong ly on the growth pressures while only slightly on the growth temperatures. Based on experimental results, a gravity-related motion of the sputtered sp ecies is proposed in film growth under relative low growth pressures. (C) 2 001 Elsevier Science B.V. All rights reserved.