Charge compensation mechanisms in La-doped BaTiO3

Citation
Fd. Morrison et al., Charge compensation mechanisms in La-doped BaTiO3, J ELECTROCE, 6(3), 2001, pp. 219-232
Citations number
44
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTROCERAMICS
ISSN journal
13853449 → ACNP
Volume
6
Issue
3
Year of publication
2001
Pages
219 - 232
Database
ISI
SICI code
1385-3449(2001)6:3<219:CCMILB>2.0.ZU;2-0
Abstract
The mechanism of doping BaTiO3 with La has been investigated by a combinati on of X-ray diffraction, electron probe microanalysis, scanning and transmi ssion electron microscopy and impedance measurements. Phase diagram results confirm that the principal doping mechanism involves ionic compensation th rough the creation of titanium vacancies. All samples heated in oxygen at 1 350-1400 degreesC are electrical insulators, consistent with an ionic compe nsation mechanism. Samples heated in air or atmospheres of low oxygen parti al pressure, at similar temperatures, lose a small amount of oxygen and thi s gives rise to a second, electronic compensation mechanism in addition to the main, ionic compensation mechanism; as a result, samples are dark-colou red and semiconducting. The change from insulating to semiconducting behavi our is reversible, by changing the atmosphere on heating at 1350-1400 degre esC. We find no evidence for any changes in cationic composition of the BaT iO3 solid solutions arising from changes in oxygen content.