The mechanism of doping BaTiO3 with La has been investigated by a combinati
on of X-ray diffraction, electron probe microanalysis, scanning and transmi
ssion electron microscopy and impedance measurements. Phase diagram results
confirm that the principal doping mechanism involves ionic compensation th
rough the creation of titanium vacancies. All samples heated in oxygen at 1
350-1400 degreesC are electrical insulators, consistent with an ionic compe
nsation mechanism. Samples heated in air or atmospheres of low oxygen parti
al pressure, at similar temperatures, lose a small amount of oxygen and thi
s gives rise to a second, electronic compensation mechanism in addition to
the main, ionic compensation mechanism; as a result, samples are dark-colou
red and semiconducting. The change from insulating to semiconducting behavi
our is reversible, by changing the atmosphere on heating at 1350-1400 degre
esC. We find no evidence for any changes in cationic composition of the BaT
iO3 solid solutions arising from changes in oxygen content.