A novel simultaneous unipolar multispectral integrated technology approachfor HgCdTeIR detectors and focal plane arrays

Citation
We. Tennant et al., A novel simultaneous unipolar multispectral integrated technology approachfor HgCdTeIR detectors and focal plane arrays, J ELEC MAT, 30(6), 2001, pp. 590-594
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
03615235 → ACNP
Volume
30
Issue
6
Year of publication
2001
Pages
590 - 594
Database
ISI
SICI code
0361-5235(200106)30:6<590:ANSUMI>2.0.ZU;2-6
Abstract
In the last few years Rockwell has developed a novel simultaneous unipolar multispectral integrated HgCdTe detector and focal plane array technology t hat is a natural and relatively straightforward derivative of our baseline double layer planar heterostructure (DLPH) molecular beam epitaxial (MBE) t echnology. Recently this technology was awarded a U.S. patent. This simulta neous unipolar multispectral integrated technology (SUMIT) shares the high performance characteristics of its DLPH antecedent. Two color focal plane a rrays with low-10(13) cm(-2)s(-1) background limited detectivity performanc e (BLIP D*) have been obtained for mid-wave infrared (MWIR, 3-5 mum) device s at T > 130 K and for long-wave infrared (LWIR, 8-10 mum) devices at T sim ilar to 80 K.