ZnO growth toward optical devices by MOVPE using N2O

Wide bandgap semiconductor zinc oxide (ZnO) layers were grown by metalorgan ic vapor phase epitaxy (MOVPE) using nitrous oxide (N2O). Strong ultraviole t (UV) photoluminescence emissions with 1000 times less deep ones at room t emperature were observed from ZnO layers grown on sapphire. A low temperatu re (500 infinityC)-grown buffer layer of ZnO was effective to enhance the i nitial nucleation process and to achieve high quality ZnO layers on it at h igher growth temperatures (600-700 infinityC). ZnO layers grown on III-V se miconductor substrates showed dominant UV luminescence in spite of low temp erature growth. These results imply the abilities of high quality ZnO growt h by MOVPE.