Sb. Trivedi et al., Transition metal doped cadmium manganese telluride: A new material for tunable mid-infrared lasing, J ELEC MAT, 30(6), 2001, pp. 728-732
Relatively new materials for mid-infrared tunable lasing using chromium-dop
ed Cd1-xMnxTe and cobalt-doped Cd1-xMnxTe have been developed. Previously,
ZnS and ZnSe were used as host materials for chromium to produce mid-infrar
ed (MIR) lasing. Compared to these materials, large diameter CdMnTe is easi
er to grow (using the Bridgman technique) and can be made more homogeneous.
Moreover, the ternary nature of Cd1-xMnxTe offers the unique opportunity t
o optimize the optical properties of the material through variation of chem
ical composition and lattice parameter. Using Cd0.55Mn0.45Te:Cr, we have de
monstrated room temperature lasing from 2.1 to 3.0 mum, and we have demonst
rated quasi-continuous wave (cw) lasing. To our knowledge, the observed tun
ing range (similar to 840 nm) of Cr2+:Cd0.55Mn0.45Te is the largest ever re
ported from a transition metal ion laser. Furthermore, this is the first ti
me that a room temperature quasi-cw laser operating at 3 mum has been demon
strated using this type of material. Also, preliminary work on Cd0.55Mn0.45
Te:Co indicates its potential for tunable mid-infrared lasing around 3600 n
m at cryogenic temperatures. Results from inductively coupled plasma mass s
pectrometry (ICP-MS), which determine the concentration of dopant that has
been incorporated into the host lattice, will be reported, as will the mate
rials characterization and lasing results. The processing issues for optimi
zing the laser performance in these material systems will also be discussed
.