High-pressure Bridgman grown CdZnTe for electro-optic applications

The linear electro-optic response of high pressure Bridgman growth semiinsu lating Cd0.9Zn0.1Te bulk samples has been characterized. Measurements have been performed in the third optical window for telecommunications around la mbda = 1.5 mum. The dependence of the Pockels figure of merit on the modula tion frequency and on the intensity of the optical probe beam is presented and discussed. Despite the residual optical absorption, Cd0.9Zn0.1Te is not affected by photo-generated auto-inhibition of the Pockels effect. This ca n be attributed to the action of an efficient intragap recombination center . It is, therefore, a suitable basic material for electro-optic switching o f near-infrared beams at low frequency and quasi-continuous wave (cw) regim es. The implementation of a Cd0.9Zn0.1Te-based cross-bar switch for optical communication applications is also presented, which reaches -30 dB of exti nction ratio and sub millisecond response time.