p-to-n type-conversion mechanisms for HgCdTe exposed to H-2/CH4 plasmas

The role of hydrogen incorporation in H-2/CH4 reactive ion etching (RIE) in duced type-conversion of p-type HgCdTe is investigated. A model is proposed in which hydrogen is incorporated into the HgCdTe crystal lattice in at le ast three different forms. It is proposed that the junction formation mecha nism is a mixture of RIE-induced damage and Hg interstitial formation to wh ich hydrogen forms strong bonds, and hydrogen-induced neutralization of acc epters. Confirmation of the model is presented based on experimental second ary ion mass spectroscopy of RIE-induced junctions, transport measurements reported previously, and initial diode bake stability testing.