Room temperature direct current (DC) photocurrents were measured for detect
or grade Cd1-xZnxTe (CZT) crystals in the spectral range of 400-1000 nm as
a function of light intensity and voltage. The photocurrent data were analy
zed and fit to a theoretical model to extract the electrical transport prop
erties for high-resistivity detector grade CZT material. Using the DC photo
current measurements, the mobility-lifetime (mu tau) products and the surfa
ce recombination velocities for both electrons and holes were measured. For
this study the CZT detectors had Au contacts, and the surfaces were treate
d in a standard 5% bromine in methanol etching solution. The correlation of
the DC photocurrent measurements and detector performance is also reported
.