The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy

Electron irradiation during reflection high-energy electron diffraction is shown to affect the growth of ZnSe and ZnMgSe by molecular beam epitaxy. Th e high-energy electrons produce an electron stimulated desorption effect du ring growth of ZnSe which primarily affects adsorbed Se. Se desorption rate s under electron irradiation are shown to be significantly larger than ther mal desorption rates. Electron irradiation also decreases ZnSe growth rates under Zn-rich conditions. The decrease in growth rate can be suppressed by either growth under Se-rich conditions or by using high-index substrate or ientations, in this case (211)B. High-energy electron irradiation does not alter composition during the growth of ZnMgSe.